[HTML][HTML] A comprehensive overview of the temperature-dependent modeling of the high-power GaN HEMT technology using mm-wave scattering parameter …
The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged
as an attractive candidate for high-frequency, high-power, and high-temperature …
as an attractive candidate for high-frequency, high-power, and high-temperature …
Small-Signal Modeling of GaN-on-Diamond HEMT Using ANFIS Method
This paper develops and demonstrates an accurate and effective approach for small-signal
modeling of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) using Adaptive …
modeling of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) using Adaptive …