An InAs quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL)
for fibre-optic applications is first demonstrated. Single fundamental mode CW output power …

Crystallographic and transport properties of nominally undoped and Sn-doped InGaAsN
layers grown by low-temperature LPE have been studied and related to the growth …

Fabrication and performance of large-detuning strained, double-quantum-well, proton-
implanted photonic crystal, vertical-cavity surface-emitting lasers is reported. The proton …

This paper presents the comparison of nitrogen incorporation in GaAsN and InGaAsN layers
grown on GaAs substrate from Ga‐and In‐rich solution, respectively, by liquid‐phase …

The effect of a high N incorporation in self-assembled InAs quantum dots (QDs) is
investigated by analyzing the electronic and structural properties around QD region …

Carrier distribution and defect induction in In 0.34 Ga 0.66 As 0.98 N 0.02/GaAs single
quantum wells grown by molecular beam epitaxy at low growth rates are investigated by …

Abstract High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature
emission wavelength from 1.3 μm to 1.5 μm range were successfully grown by Radio …

Submission note: A thesis submitted in total fulfilment of the requirements for the degree of
Doctor of Philosophy to the Department of Electronic Engineering, School of Engineering …

Strong enhancement of photoluminescence (PL) efficiency has been observed in a
GaAs/InAs quantum dots-in-a-well structure, grown with in situ irradiation of atomic hydrogen …

With the incorporation of nitrogen (N) into InAs quantum dots (QDs), the carrier distribution
near the QD displays electron emissions from a localized N-induced defect state at 0.34 eV …