Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Structurally different from conventional oxide ferroelectrics with rigid lattices, van der Waals
(vdW) ferroelectrics have stable layered structures with a combination of strong intralayer …

Two-dimensional materials with out-of-plane (OOP) ferroelectric and piezoelectric properties
are highly desirable for the realization of ultrathin ferro-and piezoelectronic devices. We …

Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …

With the scaling of lateral dimensions in advanced transistors, an increased gate
capacitance is desirable both to retain the control of the gate electrode over the channel and …

Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

The discovery of ferroelectricity in oxides that are compatible with modern semiconductor
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …

Despite their partial ionic nature, many-layered diatomic crystals avoid internal electric
polarization by forming a centrosymmetric lattice at their optimal van der Waals stacking …

The growing computational demand in artificial intelligence calls for hardware solutions that
are capable of in situ machine learning, where both training and inference are performed by …

The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …