Recent progress in physics-based modeling of electromigration in integrated circuit interconnects
The advance of semiconductor technology not only enables integrated circuits with higher
density and better performance but also increases their vulnerability to various aging …
density and better performance but also increases their vulnerability to various aging …
A Review of Reliability in Gate-All-Around Nanosheet Devices
M Wang - Micromachines, 2024 - mdpi.com
The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace
FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in …
FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in …
Modeling and Analysis of PBTI, and HCD in Presence of Self-Heating in GAA-SNS NFETs
N Choudhury, S Mahapatra - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
Ultrafast measurements (10-delay) are done to characterize the time evolution of threshold
voltage shift () due to the positive bias temperature instability (PBTI) and hot carrier …
voltage shift () due to the positive bias temperature instability (PBTI) and hot carrier …
NSFET performance optimization through SiGe channel design-A simulation study
SL Cheng, C Li, XY Dong, SS Lv, HL You - Microelectronics Reliability, 2023 - Elsevier
In this article, NSFET performances including DC electrical characteristics, analog/RF
metrics and NBTI degradation are studied using 3D fully-calibrated TCAD simulation …
metrics and NBTI degradation are studied using 3D fully-calibrated TCAD simulation …
Impact of Aging and Process Variability on SRAM-Based In-Memory Computing Architectures
As the SRAM-based In-memory Computing (IMC) paradigm arises as a promising candidate
to break the memory wall bottleneck and deliver optimal energy efficiency, reliability has …
to break the memory wall bottleneck and deliver optimal energy efficiency, reliability has …
Gate Length Dependence of Bias Temperature Instabilities up to 400° C in 4H-SiC CMOS Devices
Z Dong, Y Bai, L Qiu, C Yang, J Hao… - IEEE Electron …, 2024 - ieeexplore.ieee.org
This letter reports the bias temperature instabilities (BTI) of 4H-SiC CMOS devices with
different gate lengths (L) and gate widths (W) for integrated circuits at 400° C for the first …
different gate lengths (L) and gate widths (W) for integrated circuits at 400° C for the first …
Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling
In this work, we present a comprehensive study on the gate stack TDDB challenges in Gate-
all-around (GAA) nanosheet (NS) transistors (FETs), including volume-less Multiple Vt (Multi …
all-around (GAA) nanosheet (NS) transistors (FETs), including volume-less Multiple Vt (Multi …
Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology
L Liu, J Fang, A Pal, P Asenov, M Bajaj… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
A new modeling framework to describe the negative bias temperature instability (NBTI)
characteristics in gate-all-around (GAA) stacked nanosheet transistor is proposed. Three …
characteristics in gate-all-around (GAA) stacked nanosheet transistor is proposed. Three …
Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress
N Choudhury, A Ranjan… - 2022 IEEE International …, 2022 - ieeexplore.ieee.org
Ultrafast measurements (with 10μs delay) are done to characterize the Negative Bias
Temperature Instability (NBTI) and Hot Carrier Degradation (HCD) induced threshold …
Temperature Instability (NBTI) and Hot Carrier Degradation (HCD) induced threshold …
A Review of Reliability in Gate-All-Around Nanosheet Devices
M Wang - IEEE Electron. Device Lett, 2004 - europepmc.org
The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace
FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in …
FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in …