Emergence of electric field-induced conducting states in single-crystalline MoTe2 nanoflakes and its application in memristive devices
Conductive atomic force microscopy (cAFM) reveals the emergence of conducting states in
MoTe 2 NFs under applied electric field. In this report, we explore the use of electric field …
MoTe 2 NFs under applied electric field. In this report, we explore the use of electric field …
Nano-intrinsic true random number generation: A device to data study
We present a circuit technique to extract true random numbers from carrier capture and
emission in oxide traps in the emerging redox-based resistive memory (ReRAM). This …
emission in oxide traps in the emerging redox-based resistive memory (ReRAM). This …
NBTI-generated defects in nanoscaled devices: Fast characterization methodology and modeling
Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely
observed and known to play an important role in device's lifetime. However, its …
observed and known to play an important role in device's lifetime. However, its …
Time-dependent random threshold voltage variation due to random telegraph noise
G Wirth - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
With the downscaling of device dimensions, the variability of metal-oxide-semiconductor
field-effect transistor (MOSFET) electrical behavior is produced by factors other than …
field-effect transistor (MOSFET) electrical behavior is produced by factors other than …
Statistical analysis of the random telegraph noise in a 1.1 μm pixel, 8.3 MP CMOS image sensor using on-chip time constant extraction method
CYP Chao, H Tu, TMH Wu, KY Chou, SF Yeh, C Yin… - Sensors, 2017 - mdpi.com
A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image
sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in …
sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in …
A Dual-Point Technique for the Entire ID–VG Characterization Into Subthreshold Region Under Random Telegraph Noise Condition
A simple dual-point technique to measure the entire transfer characteristics (ID-VG) down to
sub-threshold region in the nano-scaled MOSFET under random telegraph noise (RTN) …
sub-threshold region in the nano-scaled MOSFET under random telegraph noise (RTN) …
NBTI-related variability impact on 14-nm node FinFET SRAM performance and static power: Correlation to time zero fluctuations
A Monte Carlo SPICE framework is proposed to evaluate the impact of negative bias
temperature instability (NBTI) variability on performance and static power (PS) of static …
temperature instability (NBTI) variability on performance and static power (PS) of static …
True random number generator (TRNG) for secure communications in the era of IoT
True Random number Generator (TRNG) is critical for secure communications. In this work,
we explain in details regarding our recent solution on TRNG using random telegraph noise …
we explain in details regarding our recent solution on TRNG using random telegraph noise …
A comparative analysis of NBTI variability and TDDS in GF HKMG planar p-MOSFETs and RMG HKMG p-FinFETs
N Parihar, R Anandkrishnan… - … on Electron Devices, 2019 - ieeexplore.ieee.org
The time kinetics of threshold voltage shift (ΔV T) is measured for negative-bias temperature
instability (NBTI) and time-dependent defect spectroscopy (TDDS) experiments by an ultra …
instability (NBTI) and time-dependent defect spectroscopy (TDDS) experiments by an ultra …
PVT2: Process, Voltage, Temperature and Time-dependent Variability in Scaled CMOS Process
AKMM Islam, H Onodera - 2018 IEEE/ACM International …, 2018 - ieeexplore.ieee.org
In addition to the conventional PVT (Process, Voltage and Temperature) variation, time-
dependent current fluctuation such as random telegraph noise (RTN) poses a new …
dependent current fluctuation such as random telegraph noise (RTN) poses a new …