Modeling and Design Methodology of High-Efficiency Class-F and Class- Power Amplifiers
In this paper, efficiency-limiting physical constraint effects imposed on the knee voltage,
along with a variation of the optimum load resistance, are investigated for highly efficient …
along with a variation of the optimum load resistance, are investigated for highly efficient …
A compact 12-watt high-efficiency 2.1-2.7 GHz class-E GaN HEMT power amplifier for base stations
MP van der Heijden, M Acar… - 2009 IEEE MTT-S …, 2009 - ieeexplore.ieee.org
A compact broadband class-E power amplifier design is presented. High broadband power
efficiency is observed from 2.0-2.5 GHz, where drain efficiency> 74% and PAE> 71%, when …
efficiency is observed from 2.0-2.5 GHz, where drain efficiency> 74% and PAE> 71%, when …
An inverse class-F GaN HEMT power amplifier with 78% PAE at 3.5 GHz
This paper presents the design and implementation of an inverse class F power amplifier
(PA) using a high power GaN HEMT transistor. For a 3.5 GHz continuous wave (CW) signal …
(PA) using a high power GaN HEMT transistor. For a 3.5 GHz continuous wave (CW) signal …
Comparative study of recent advances in power amplification devices and circuits for wireless communication infrastructure
O Hammi, FM Ghannouchi - 2009 16th IEEE International …, 2009 - ieeexplore.ieee.org
This paper presents recent advances in power amplification devices and circuits with
application to wireless communication infrastructure. A comparative analysis of the two …
application to wireless communication infrastructure. A comparative analysis of the two …
A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier
This paper presents the design and implementation of an inverse class-F power amplifier
(PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a …
(PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a …
[图书][B] Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
S Maroldt - 2012 - researchgate.net
Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base
stations for mobile communication. This novel digital base station concept reduces system …
stations for mobile communication. This novel digital base station concept reduces system …
High efficiency GaN current‐mode class‐D amplifier at 2.6 GHz using pure differential transmission line filters
A Sigg, S Heck, A Bräckle, M Berroth - Electronics Letters, 2013 - Wiley Online Library
In class‐D operation the impedances of the output network at each harmonic frequency at
the intrinsic terminals of the transistors are of main importance. This reported work …
the intrinsic terminals of the transistors are of main importance. This reported work …
High efficiency GaN Class E power amplifier at 5.8 GHz with harmonic control network
W Fu, S Dong, C Yang, Y Wang… - 2014 IEEE Wireless …, 2014 - ieeexplore.ieee.org
This paper presents a 5.8 GHz high efficiency class-E power amplifier (PA) using a 25-W
GaN HEMT large signal model for wireless power transmission applications. The input and …
GaN HEMT large signal model for wireless power transmission applications. The input and …
Design of Class F-1 Power Amplifier Using GaN pHEMT for Industrial Applications
A Al Tanany, A Sayed, G Boeck - 2009 German Microwave …, 2009 - ieeexplore.ieee.org
This work presents a Class F-1 power amplifier (PA) operating at 2.35 GHz. An output power
of 40 W (46 dBm) was achieved with 10 dB gain. The maximum drain efficiency was …
of 40 W (46 dBm) was achieved with 10 dB gain. The maximum drain efficiency was …
[PDF][PDF] Science for Systems Band 9
S Maroldt - publica.fraunhofer.de
Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base
stations for mobile communication. This novel digital base station concept reduces system …
stations for mobile communication. This novel digital base station concept reduces system …