One of the fundamental properties of semiconductors is their ability to support highly tunable
electric currents in the presence of electric fields or carrier concentration gradients. These …

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …

Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …

The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two
that are critical to a number of technologies in modern life—the other being silicon. Light …

In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor
(HEMT) device is presented. Drain-current dispersion effects are investigated when gate or …

Self-powered ultraviolet (UV) photodetectors (PDs) based on GaN have been of great
importance in the application of UV communication, thanks to its wide direct bandgap and …

Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …

Wide bandgap, high saturation velocity, and high thermal stability are some of the properties
of GaN, which make it an excellent material for high-power, high-frequency, and high …