Based on the characteristics of space particle radiation in the Sun-synchronous orbit (SSO),
a space particle radiation effect comprehensive measuring instrument (SPRECMI) was …

The single event effect caused by space heavy ion radiation is one of the important factors
affecting the safety and operation of spacecraft on orbit. In the research and evaluation of the …

We give a brief analysis of the probability of spacecraft on-board electronics (OBE) failures
under influence of primary space radiation and products of nuclear reactions, which have a …

An analysis of the impact of high-energy cosmic radiation protons on the onboard
electronics of the spacecraft was performed. It has been shown that protons can cause …

In this paper, eight different SRAM cells are studied and evaluated with a 65nm CMOS
technology. The cells were designed with radiation-hardening-by-design approaches …

In this paper, the sensitive volume and critical charge of a 65-nm CMOS SRAM as two
important quantities in Single Event Upset (SEU) calculations have been determined. SEU is …

در این پژوهش، حجم حساس و بار بحرانی یک حافظه SRAM با تکنولوژی 65 نانومتری CMOS، به
عنوان دو کمیت مهم در محاسبات ترابرد پرتو در رخداد به‌هم‌ریختگی‌ تک‌حادثه‌ای (SEU) که رایج‌ترین …‎

The simulation results received by mixed TCAD-SPICE modeling for linear energy transfer
(LET), transient characteristics of voltages and currents in 0.24 um SRAM cells with SOI …