Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance

E Igumbor, M Dongho-Nguimdo, E Mapasha… - Journal of Electronic …, 2024 - Springer
Defect complexes have a significant impact on the structural, electronic, optical and
electrical properties of semiconductors. Several defect complexes formed by n-type and p …

Complex defects in Al0.5Ga0.5N by first principles calculations

L Zhang, Y Ye, J Zhou, Z Gan, L Cao, X Li - Molecular Physics, 2024 - Taylor & Francis
The complex native point defects in Al0. 5Ga0. 5N are studied by density functional theory
(DFT) and Heyd, Scuseria and Ernzerhof (HSE) hybrid functional. The lower formation …

Ab␣ Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE)

E Igumbor, RE Mapasha, WE Meyer - Journal of Electronic Materials, 2017 - Springer
The results of an ab␣ initio modelling of aluminium substitutional impurity (Al _\rm Ge<!
CDATA Al Ge), aluminium interstitial in Ge I _\rm Al I Al for the tetrahedral (T) and hexagonal …

Magnetic behavior and Curie temperature of Dy doped MgSe: Ab-initio calculations

D Drissi, N Mediane, F Goumrhar… - Computational Condensed …, 2022 - Elsevier
In this paper, we have studied the structural, electronic and magnetic properties of
Magnesium selenide (MgSe) doped with a rare earth magnetic impurity “Dy” in the zinc …

Rare earth interstitials in Ge: a hybrid density functional theory study

E Igumbor, RC Andrew, WE Meyer - Journal of Electronic Materials, 2017 - Springer
In this work, the results of density functional theory calculations for rare earth (Ce, Pr, Eu,
and Er) interstitials in Ge are presented. We employed the hybrid functional of Heyd …

Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

E Igumbor, GM Dongho-Nguimdo, RE Mapasha… - Journal of Materials …, 2019 - Springer
In this report, we used the hybrid density functional theory to systematically investigate the
formation of substitution–interstitial complex defects formed by group III (B, Al, Ga and In) …

[图书][B] Hybrid functional study of point defects in germanium

E Igumbor - 2017 - search.proquest.com
Germanium exhibits electron and hole mobilities that are higher than silicon. These unique
properties make Ge a promising material for the development of metal-oxide semiconductor …

Rare earth substitutional impurities in germanium: a hybrid density functional theory study

E Igumbor, E Omotoso, SM Tunhuma, HT Danga… - Nuclear Instruments and …, 2017 - Elsevier
Abstract The Heyd, Scuseria, and Ernzerhof (HSE06) hybrid functional by means of density
functional theory has been used to model the electronic and structural properties of rare …

Rare earth interstitial-complexes in Ge: hybrid density functional studies

E Igumbor, E Omotoso, HT Danga, SM Tunhuma… - Nuclear Instruments and …, 2017 - Elsevier
We present results of the structural, energetic and electronic properties of rare earth (RE)
interstitial-complexes in Ge (RE Ge Ge i; for RE: Ce, Pr, Eu, Er and Tm). We used the Heyd …

Ab initio study of transition metals impurities and stability of complexes in germanium (Ge)

E Igumbor, E Omotoso, AA Khaleed, BA Taleatu - Ife Journal of Science, 2018 - ajol.info
By means of density functional theory, we present results of an ab initio calculation of
vacancy-interstitial complexes (T Ge-V nGe IT, for n= 1, 2, 3 and T: Cr, Mo, W, Mn and Fe) in …