Spinel ferrites for resistive random access memory applications
Cutting edge science and technology needs high quality data storage devices for their
applications in artificial intelligence and digital industries. Resistive random access memory …
applications in artificial intelligence and digital industries. Resistive random access memory …
Defect-stabilized substoichiometric polymorphs of hafnium oxide with semiconducting properties
Hafnium oxide plays an important role as a dielectric material in various thin-film electronic
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
SPICE implementation of the dynamic memdiode model for bipolar resistive switching devices
This paper reports the fundamentals and the SPICE implementation of the Dynamic
Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching …
Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching …
Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices
A model device based on an epitaxial stack combination of titanium nitride (111) and
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
Eightwise Switching Mechanism in Memristive SrTiO3 Devices and Its Implications on the Device Performance
A Sarantopoulos, R Waser… - physica status solidi (a …, 2024 - Wiley Online Library
Filamentary‐type resistive switching devices based on the valence change mechanism
(VCM) have been studied extensively during the past decades, due to their great …
(VCM) have been studied extensively during the past decades, due to their great …
Crystal and electronic structure of oxygen vacancy stabilized rhombohedral hafnium oxide
Hafnium oxide is an outstanding candidate for next-generation nonvolatile memory solutions
such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access …
such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access …
Noble‐metal‐free memristive devices based on IGZO for neuromorphic applications
M Pereira, J Deuermeier, R Nogueira… - Advanced Electronic …, 2020 - Wiley Online Library
Amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) based memristive devices with
molybdenum contacts as both top and bottom electrodes are presented aiming to be used in …
molybdenum contacts as both top and bottom electrodes are presented aiming to be used in …
Intrinsic RESET speed limit of valence change memories
M von Witzleben, S Wiefels… - ACS Applied …, 2021 - ACS Publications
During the past decade, valence change memory (VCM) has been extensively studied due
to its promising features, such as a high endurance and fast switching times. The information …
to its promising features, such as a high endurance and fast switching times. The information …
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
This work investigates the transition from digital to gradual or analog resistive switching in
yttrium oxide‐based resistive random‐access memory devices. It is shown that this transition …
yttrium oxide‐based resistive random‐access memory devices. It is shown that this transition …
Controlling the formation of conductive pathways in memristive devices
Resistive random‐access memories are promising candidates for novel computer
architectures such as in‐memory computing, multilevel data storage, and neuromorphics …
architectures such as in‐memory computing, multilevel data storage, and neuromorphics …