Self-connected CuO–ZnO radial core–shell heterojunction nanowire arrays grown on interdigitated electrodes for visible-light photodetectors

A Costas, C Florica, N Preda, C Besleaga… - Scientific Reports, 2022 - nature.com
An original photodetector system based on self-connected CuO–ZnO radial core–shell
heterojunction nanowire arrays grown on metallic interdigitated electrodes, operating as …

[HTML][HTML] Solution-processed flexible broadband ZnO photodetector modified by Ag nanoparticles

NP Klochko, KS Klepikova, IV Khrypunova, VR Kopach… - Solar Energy, 2022 - Elsevier
In this work, we present flexible broadband photodetectors (PDs) fabricated by a deposition
of nanostructured zinc oxide (ZnO) films on polyimide (PI) substrates by using cheap and …

Developing low-cost nanohybrids of ZnO nanorods and multi-shaped silver nanoparticles for broadband photodetectors

NM Nguyen, DA Ngo, HN Luong, HND Huynh… - RSC …, 2023 - pubs.rsc.org
Photodetectors are essential elements for various applications like fiber optic
communication systems, biomedical imaging, and so on. Thus, improving the performance …

Fabrication of n-ZnS/p-SnS, n-ZnO/p-SnS, and n-SnO2/p-SnS heterojunctions by 2-step SILAR process for photodetector applications

P Kumar, SN Moger, GK Rao, MG Mahesha - Optics & Laser Technology, 2024 - Elsevier
In this work, we present the fabrication and detailed analysis of three functional
heterojunctions based on SnS. Unlike most of the previous reports, all semiconductor layers …

Enhanced luminescence/photodetecting bifunctional devices based on ZnO: Ga microwire/p-Si heterojunction by incorporating Ag nanowires

Y Liu, R Dai, M Jiang, K Tang, P Wan, C Kan - Nanoscale Advances, 2021 - pubs.rsc.org
With the disadvantages of indirect band gap, low carrier mobility, and large lattice mismatch
with other semiconductor materials, one of the current challenges in Si-based materials and …

Surface/interface defect engineering on charge carrier transport toward broadband (UV-NIR) photoresponse in the heterostructure array of p-Si NWs/ZnO …

C Samanta, A Ghatak, AK Raychaudhuri… - ACS Applied …, 2023 - ACS Publications
The surface/interface properties, especially interfacial states, have a key impact on overall
carrier generation, recombination/transport, and/or collection proficiency for heterostructure …

Current-voltage characteristics of nano whisker ZnO/Si heterojunction under UV exposition

NS Koc, SP Altintas, M Gokcen, M Dogruer… - Sensors and Actuators A …, 2022 - Elsevier
Abstract In/ZnO/p-Si heterojunction diode was produced to investigate the photo-
responsivity and electrical features under ultraviolet (UV) light. A hydrothermal synthesis …

Ultrafast and Ultrabroadband UV–vis-NIR Photosensitivity under Reverse and Self-Bias Conditions by n+-ZnO/n-Si Isotype Heterojunction with >1 kHz Bandwidth

S Mondal, S Halder, D Basak - ACS Applied Electronic Materials, 2023 - ACS Publications
A high-performance broadband photodetector has attracted significant attention due to its
wide range of applications. We report an n+-ZnO/n-Si isotype heterojunction by depositing …

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiOx Surface Passivation

B Son, SH Shin, ZJ Zhao, BK Ju… - Advanced Materials …, 2023 - Wiley Online Library
Abstract Silicon (Si) nanowire (NW) array is a promising light‐trapping platform due to the
strong interaction between light and nanostructure. A photodetector benefits from the …

Solution-Processed NiO/Si Heterojunctions for Efficient Self-Powered UV–Vis-NIR Broadband Photodetection

S Jiang, C Wang, C Zhang, M Chen… - ACS Applied …, 2024 - ACS Publications
In the current work, efficient self-powered UV–vis-near-infrared (NIR) broadband NiO/Si
heterojunction photodetectors have been fabricated by room-temperature spin-coating …