Design of a room-temperature topological exciton-polariton laser in a photonic crystal slab
We propose theoretically a scheme to get a room-temperature two-dimensional topological
exciton-polariton laser with propagating topological lasing modes. The structure uses …
exciton-polariton laser with propagating topological lasing modes. The structure uses …
Photoemission Study of GaN Passivation Layers and Band Alignment at GaInP (100) Heterointerfaces
To date, III–V semiconductor-based tandem devices with GaInP top photoabsorbers show
the highest solar-to-electricity or solar-to-fuel conversion efficiencies. In …
the highest solar-to-electricity or solar-to-fuel conversion efficiencies. In …
Subpicosecond Spectroscopic Ellipsometry of the Photoinduced Phase Transition in VO2 Thin Films
We report the first application of broadband time-resolved pump–probe ellipsometry to study
the ultrafast dynamics of the photoinduced insulator-to-metal transition (IMT) in vanadium …
the ultrafast dynamics of the photoinduced insulator-to-metal transition (IMT) in vanadium …
[HTML][HTML] Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN II: Absorption edge shift with gain and temperature effects
We recently published a study concerning femtosecond pump–probe absorption edge
spectroscopy of cubic GaN (fundamental bandgap: 3.23 eV), resulting in the transient …
spectroscopy of cubic GaN (fundamental bandgap: 3.23 eV), resulting in the transient …
[HTML][HTML] Disentangling the evolution of electrons and holes in photoexcited ZnO nanoparticles
The evolution of charge carriers in photoexcited room temperature ZnO nanoparticles in
solution is investigated using ultrafast ultraviolet photoluminescence spectroscopy, ultrafast …
solution is investigated using ultrafast ultraviolet photoluminescence spectroscopy, ultrafast …
Hot-phonon effects in photo-excited wide-bandgap semiconductors
O Herrfurth, E Krüger, S Blaurock… - Journal of Physics …, 2021 - iopscience.iop.org
Carrier and lattice relaxation after optical excitation is simulated for the prototypical wide-
bandgap semiconductors CuI and ZnO. Transient temperature dynamics of electrons, holes …
bandgap semiconductors CuI and ZnO. Transient temperature dynamics of electrons, holes …
[HTML][HTML] Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function
An ultra-fast change of the absorption onset for zincblende gallium-nitride (zb-
GaN)(fundamental bandgap: 3.23 eV) is observed by investigating the imaginary part of the …
GaN)(fundamental bandgap: 3.23 eV) is observed by investigating the imaginary part of the …
Broadband Mueller ellipsometer as an all-in-one tool for spectral and temporal analysis of mutarotation kinetics
D Vala, M Mičica, D Cvejn, K Postava - RSC advances, 2023 - pubs.rsc.org
Spectroscopic Mueller matrix ellipsometry is becoming increasingly routine across physical
branches of science, even outside optics. The highly sensitive tracking of the polarization …
branches of science, even outside optics. The highly sensitive tracking of the polarization …
[PDF][PDF] Effekte freier Ladungsträger auf die optischen Eigenschaften von kubischem Galliumnitrid
E Baron - 2023 - opendata.uni-halle.de
Spätestens seit dem Nobelpreis 2014 für die Entwicklung der blauen Leucht-Emitter-Diode
(LED)[1–4] sind die Gruppe III-Nitride im Fokus von wissenschaftlichem und industriellem …
(LED)[1–4] sind die Gruppe III-Nitride im Fokus von wissenschaftlichem und industriellem …
Femtosecond pump-probe absorption edge spectroscopy of cubic GaN
Time-dependent femtosecond pump-probe spectroscopic ellipsometry studies on
zincblende gallium-nitride (zb-GaN) are performed and analyzed between 2.9-3.7 eV. An …
zincblende gallium-nitride (zb-GaN) are performed and analyzed between 2.9-3.7 eV. An …