ABSTRACT A semiconductor device is provided. The semiconductor device includes a
substrate including a first region and a second region. First and second dielectric films are …

(57) ABSTRACT A FinFET device structure is provided. The FinFET device structure
includes an isolation structure formed over a substrate and a fin structure formed over the …

2014-02-19 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD …

A method of fabricating a semiconductor device is disclosed. Provided is a substrate having
a dummy gate formed thereon, a spacer on a sidewall of the dummy gate and a first …

Disclosed is a method of manufacturing semiconductor devices. A gate trench and an
insulation pattern defined by the gate trench are formed on a substrate and the protection …

(57) ABSTRACT A semiconductor device structure is provided. The semicon ductor device
structure includes a substrate, a first fin structure and a second fin structure disposed over …

Integrated circuit devices include a substrate including first and second fin-type active
regions and first and second gate structures. The first gate structure includes first gate insu …

Semiconductor devices may include a substrate including first to third regions, with first to
third interfacial layers in the first to third regions, respectively, first to third high-k dielectric …

Various embodiments provide semiconductor devices and methods for forming the same. A
substrate having a dielectric layer formed thereon is provided. The dielectric layer has six …

US9530778B1 - Semiconductor devices having metal gate and method for manufacturing
semiconductor devices having metal gate - Google Patents US9530778B1 - Semiconductor …