A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics

JW Park, BH Kang, HJ Kim - Advanced Functional Materials, 2020 - Wiley Online Library
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …

Materials capability and device performance in flexible electronics for the Internet of Things

Y Zhan, Y Mei, L Zheng - Journal of Materials Chemistry C, 2014 - pubs.rsc.org
The Internet of Things (IoT) has a broad vision of connecting every single object in the world
to form one network. Flexible electronic devices, including RFIDs, sensors, memory devices …

Metal oxide semiconductor thin-film transistors for flexible electronics

L Petti, N Münzenrieder, C Vogt, H Faber… - Applied Physics …, 2016 - pubs.aip.org
The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …

Roadmap on energy harvesting materials

V Pecunia, SRP Silva, JD Phillips… - Journal of Physics …, 2023 - iopscience.iop.org
Ambient energy harvesting has great potential to contribute to sustainable development and
address growing environmental challenges. Converting waste energy from energy-intensive …

Revisiting the δ-phase of poly (vinylidene fluoride) for solution-processed ferroelectric thin films

M Li, HJ Wondergem, MJ Spijkman, K Asadi… - Nature materials, 2013 - nature.com
Abstract Ferroelectric poly (vinylidene-fluoride)(PVDF) has, in the past, been proposed as an
ideal candidate for data storage applications as it exhibits a bistable, remanent, polarization …

Flexible diodes for radio frequency (RF) electronics: a materials perspective

J Semple, DG Georgiadou, G Wyatt-Moon… - Semiconductor …, 2017 - iopscience.iop.org
Over the last decade, there has been increasing interest in transferring the research
advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF …

Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

YH Zhang, ZX Mei, HL Liang, XL Du - Chinese Physics B, 2017 - iopscience.iop.org
Flexible and transparent electronics enters into a new era of electronic technologies.
Ubiquitous applications involve wearable electronics, biosensors, flexible transparent …

Electrical characterization of flexible InGaZnO transistors and 8-b transponder chip down to a bending radius of 2 mm

AK Tripathi, K Myny, B Hou… - … on Electron Devices, 2015 - ieeexplore.ieee.org
In this paper, we present the fabrication and characterization of highly flexible indium-
gallium-zinc-oxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a …

High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

A Chasin, S Steudel, K Myny, M Nag, TH Ke… - Applied Physics …, 2012 - pubs.aip.org
High-performance Schottky diodes based on palladium blocking contacts were fabricated
upon depositing indium-gallium-zinc oxide (IGZO) with high oxygen content. We find that an …

Charge transport in amorphous InGaZnO thin-film transistors

WC Germs, WH Adriaans, AK Tripathi… - Physical Review B …, 2012 - APS
We investigate the mechanism of charge transport in indium gallium zinc oxide (a-IGZO), an
amorphous metal-oxide semiconductor. We measured the field-effect mobility and the …