Homoepitaxy provides an ideal testing ground for fundamental concepts in film growth. The
rich variety of complex far-from-equilibrium morphologies which can form during deposition …

This paper presents simple models useful in analyzing the growth of nanostructures
obtained by cluster deposition. After a brief survey of applications and experimental …

A review is given of nucleation and growth models as applied to the earliest stages of thin
film growth. Rate equations, kinetic Monte Carlo, and level set simulations are described in …

GaAs (0 0 1) has been one of the most intensively studied surfaces for the past 30 years due
both to its importance as a substrate for epitaxial growth and to the challenge its phase …

The antiphase domain structure in epitaxial Fe 3 O 4 films determines its physical properties
such as superparamagnetism, resistivity, and magnetoresistance. A good knowledge and …

Submonolayer island-size distributions are obtained with scanning tunneling microscopy
and used to infer the nucleation and growth kinetics of islands on the three low-index …

We present a comparative study of the nucleation and growth of pentacene monolayer
islands in the submonolayer regime onto inorganic substrates of Si O 2 and sapphire (Al 2 O …

The initial stage during vapor deposition has been extensively studied in physical vapor
deposition (PVD) processes, and nucleation theories have been successfully used to model …

We examine the nucleation kinetics of Au clusters on graphene and explore the relationship
with layer number and underlying supporting substrate of graphene. Using the mean field …

Deposition at room temperature of Ga on Si (100) produces single-atom-wide metal rows
orthogonal to the Si-dimer rows. Detailed analysis using scanning tunneling microscopy …