Computing in memory (CIM) could be used to overcome the von Neumann bottleneck and to
provide sustainable improvements in computing throughput and energy efficiency …

Exploiting spin transport increases the functionality of electronic devices and enables such
devices to overcome physical limitations related to speed and power. Utilizing the Rashba …

Spintronic devices offer low power consumption, built-in memory, high scalability and
reconfigurability, and could therefore provide an alternative to traditional semiconductor …

Recently, experimental results have demonstrated that perpendicular magnetic tunnel
junction (p-MTJ) with the antiferromagnetic (AFM)/ferromagnetic (FM)/oxide structure can …

The control of magnetization by electric current is a rapidly developing area motivated by a
strong synergy between breakthrough basic research discoveries and industrial applications …

Spin–orbit torque induced ferromagnetic magnetization switching brought by injecting a
charge current into strong spin–orbit-coupling materials is an energy-efficient writing method …

The rising overheads of data-movement and limitations of general-purpose processing
architectures have led to a huge surge in the interest in “processing-in-memory”(PIM) …

Harnessing the nonvolatility of magnetism and the power of electric control, magnetoelectric
devices that control magnetism electrically promise to deliver next-generation electronics …

Recently, exploiting emerging nonvolatile memories to implement the process-in-memory
(PIM) paradigm have shown great potential to address the von Neumann bottleneck and …

Conventional von Neumann architecture suffers from bottlenecks in computing performance
and power consumption due to frequent data exchange between memory and processing …