[HTML][HTML] Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

CN Saha, A Vaidya, AFM Bhuiyan, L Meng… - Applied Physics …, 2023 - pubs.aip.org
This Letter reports a high performance β-Ga 2 O 3 thin channel MOSFET with T gate and
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …

[HTML][HTML] Temperature dependent pulsed IV and RF characterization of β-(AlxGa1− x) 2O3/Ga2O3 hetero-structure FET with ex situ passivation

CN Saha, A Vaidya, U Singisetti - Applied Physics Letters, 2022 - pubs.aip.org
In this work, we report a study of the temperature dependent pulsed current voltage and RF
characterization of β-(Al x Ga 1− x) 2 O 3/Ga 2 O 3 hetero-structure FETs (HFETs) before and …

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

O Maimon, Q Li - Materials, 2023 - mdpi.com
Power electronics are becoming increasingly more important, as electrical energy
constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly …

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors

J Chen, H Qu, J Sui, X Lu, X Zou - Journal of Applied Physics, 2024 - pubs.aip.org
The study of interface states and bulk traps and their connection to device instability is highly
demanded to achieve reliable β-Ga2O3 metal-oxide-semiconductor (MOS) devices …

A novel Ga2O3 superjunction LDMOS using P-Type diamond with improved performance

M Kong, J Gao, Z Cheng, Z Hu… - ECS Journal of Solid …, 2022 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) has drawn remarkable attention for next generation power
electronics applications. However, the development of Ga 2 O 3 power devices is seriously …

Thin channel Ga2O3 MOSFET with 55 GHz fMAX and> 100 V breakdown

CN Saha, A Vaidya, NJ Nipu, L Meng, DS Yu… - Applied Physics …, 2024 - pubs.aip.org
This Letter reports a highly scaled 90 nm gate length β-Ga 2 O 3 (Ga 2 O 3) T-gate MOSFET
with a power gain cutoff frequency (f MAX) of 55 GHz. The 60 nm thin epitaxial Ga 2 O 3 …

Transient characteristics of β-Ga2O3 nanomembrane Schottky barrier diodes on various substrates

J Lai, JH Seo - Journal of Physics D: Applied Physics, 2022 - iopscience.iop.org
In this paper, transient delayed rise and fall times for beta gallium oxide (β-Ga 2 O 3)
nanomembrane (NM) Schottky barrier diodes (SBDs) formed on four different substrates …

Enhancement mode β-(Al0. 19Ga0. 81) 2O3/Ga2O3 HFETs with superlattice back-barrier layer

G Atmaca, HY Cha - Micro and Nanostructures, 2024 - Elsevier
In this study, we numerically investigate the improvement in maximum drain current of an
enhancement-mode β-(Al 0.19 Ga 0.81) 2 O 3/Ga 2 O 3 heterostructure field-effect transistor …

Anomalous dynamic performance in heterogeneous Ga2O3-on-SiC MOSFETs fabricated using ion-implantation cutting process

CY Liu, YB Wang, XL Jia, WH Xu, SQ Huang… - Physica …, 2024 - iopscience.iop.org
We present the first investigation into the dynamic characteristics of heterogeneous Ga 2 O 3-
on-SiC (GaOSiC) MOSFETs fabricated using an ion implantation process. A noteworthy …

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

CN Saha, A Vaidya, AFM Bhuiyan, L Meng… - arXiv preprint arXiv …, 2022 - arxiv.org
This letter reports high-performance $\mathrm {\beta} Ga2O3 thin channel MOSFETs with T-
gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length …