TiO2‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories

X Zhang, J Jin, J Kim, C Balocco… - physica status solidi …, 2024 - Wiley Online Library
This study presents TiO2‐based Schottky diodes designed as bidirectional switches for
bipolar resistive memories. The TiO2 films in these Schottky diodes are prepared through an …

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics

X Lin, J Jin, J Kim, Q Xin, J Zhang… - … Science and Technology, 2023 - iopscience.iop.org
Low-voltage oxide semiconductors thin-film transistors (TFTs) with ultra-thin dielectrics are
gaining attention in wearable electronics. However, it is a challenge for oxide semiconductor …

Preparation and Synthesis of Polycrystalline InGaZnO4 via Tartaric Acid Mediated Sol–Gel Method

GM Zirnik, SA Sozykin, DA Uchaev… - Russian Metallurgy …, 2024 - Springer
A sol–gel method is developed to synthesize ternary indium–gallium–zinc oxide using
tartaric acid as an organic complexing agent. The synthesized samples were examined by X …

Improved Process Stability and Light Detection in Phototransistors via Inverted MoS2/a‐IGZO Heterojunction Integration

J Jin, K Kang, Z Xiao, J Zhang, TY Kim… - … status solidi (a), 2024 - Wiley Online Library
The integration of molybdenum disulfide (MoS2) with other semiconductors to form
heterojunction phototransistors demonstrates potential for optoelectronic applications due to …

[HTML][HTML] One-volt oxide based complementary circuit

J Wang, X Lin, Y Li, Q Xin, A Song, J Kim, J Jin… - AIP Advances, 2024 - pubs.aip.org
In low-power electronics, there is a substantial demand for high-performance p-type oxide
thin-film transistors (TFTs) that are capable of efficient operation at low voltages. In this …