Defect engineering involves manipulating the type, concentration, spatial distribution, or
mobility of defects within a crystalline solid. Defect engineering in semiconductors has …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

In this perspectives paper we will explore the doping state-of-the-art as it evolves for 3D to
2D structures and materials, and the following impact on the metrology methods needed to …

Laser Annealing was introduced into mainstream CMOS manufacturing nearly a decade
ago and since then has been evolving capturing new applications and expanding into new …

The advent of high surface-to-volume ratio devices has necessitated a revised approach to
parameter extraction and process evaluation in field-effect transistor technologies. In this …

Electrical activation and redistribution of 500 eV boron implants in preamorphized silicon
after nonmelt laser annealing at 1150 C and isochronal rapid thermal postannealing are …

Junction leakage becomes more significant as metal-oxide-semiconductor (MOS)
technologies scale down in bulk-silicon. In this work we quantify the four key elements to …

Silicon PiN diodes with ap+ region in the anode—where boron atoms are implanted and
activated with relatively low-temperature furnace annealing (FA) or high-temperature laser …

Rapid thermal processing (RTP) is a key technology in the fabrication of advanced
integrated circuits, with a wide range of applications, including titanium silicide and nitride …

Single-wafer rapid thermal processing, which has become indispensable in the present-day
manufacture of integrated circuits, has replaced batch furnace processing to satisfy device …