Abstract Two‐dimensional (2D) materials exhibit unique electronic, optical, magnetic,
mechanical, and thermal properties due to their special crystal structure and thus have …

Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in
recent years. Although the technology seemed to be difficult to reproduce by other labs at …

Micro light-emitting diode (micro-LED) will play an important role in the future generation of
smart displays. They are found very attractive in many applications, such as maskless …

We demonstrate robust ferroelectricity in single-crystalline wurtzite phase N-polar
ScAlN/GaN heterostructures grown on on-axis c-plane sapphire substrates by molecular …

Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental
building block for 2D heterostructures and devices. However, the controlled and scalable …

AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …

Quasi van der Waals epitaxy, a pioneering epitaxy of sp3‐hybridized semiconductor films on
sp2‐hybridized 2D materials, provides a way, in principle, to achieve single‐crystal …

The heteroepitaxy of high-quality aluminum nitride (AlN) with low stress is essential for the
development of energy-efficient deep ultraviolet light-emitting diodes (DUV-LEDs). In this …

Beyond traditional heteroepitaxy, 2D‐materials‐assisted epitaxy opens opportunities to
revolutionize future material integration methods. However, basic principles in 2D‐material …

Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for
fabricating multifunctional devices beyond the limitation of conventional substrates. Despite …