We summarize the recipes and describe the role of sputtering parameters in producing
highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is …

DC reactive magnetron sputtering technique has been used for the preparation of AlN thin
films. The deposition temperature and the flow ratio of N 2/Ar were varied and subsequent …

Hexagonal AlN thin films have been deposited by DC reactive magnetron sputtering at room
temperature. For a first set of samples, sputtered AlN films were deposited on silicon Si (100) …

In this paper, mass spectrometry was used to measure the ion energy distributions of the
main species during the sputtering of an aluminum target in a reactive Ar+ N 2 mixture. Both …

AlN films were prepared with a microwave plasma enhanced chemical vapor deposition
reactor working at different process temperatures in order to obtain polycrystalline< 0001> …

Piezoelectricity has been underutilized in the MEMS world. Fabrication process
compatibility, complexity, and the limited availability of repeatable and reliable piezoelectric …

Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by
DC and RF reactive magnetron sputtering at room temperature. For a first set of samples …

Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency
(RF) magnetron sputtering using an aluminum target. The influence of the deposition …

Capacitance–voltage measurements of high quality PECVD and MBE grown aluminum
nitride (AlN) thin films have been performed. The prepared films have shown polycrystalline …

In this work, the growth of conductive AlN thin films by plasma-assisted reactive evaporation
at different filament-to-substrate distances was presented and discussed. The elemental …