Advanced techniques for the magnetotransport characterization of semiconductor IR
detector materials are reviewed. Both conventional mixed-conduction and'mobility …

In this paper, experimental results of laser-irradiance-dependent polarity inversion of laser
beam induced current (LBIC) for As-doped long-wavelength HgCdTe pixel arrays grown on …

The influence of different junction current components (diffusion current for radiative and
Auger 7 recombination mechanisms, tunneling and depletion layer currents) on the R 0 A …

At present HgCdTe (HgCdTe) is the most important intrinsic semiconductor alloy system for
infrared detectors. However, in spite of achievements in material and device quality …

In this paper, we report on the disappearance of the photosensitive area extension effect
and the unusual temperature dependence of junction transformation for mid-wavelength, n …

The surface recombination velocity s has been determined for Hg1− x Cd x Te (x∼ 0.2) for
two different surface passivations:(i) anodic sulfide with an overcoating of ZnS and (ii) ZnS …

The concepts and definitions of the steady‐state minority‐carrier lifetime, the steady‐state
majority‐carrier lifetime, and the transient excess‐carrier lifetime in semiconductors are …

Minority carrier transport characteristics of vacancy-doped p-type HgCdTe such as carrier
concentration, lifetime, and mobility are investigated. In the calculation of the carrier …

In this paper the set of photoelectromagnetic methods for determination of recombination
and diffusion parameters of charge carriers in p-type mercury cadmium telluride epitaxial …

A three‐level model for one divalent acceptor (Hg vacancy) and one monovalent acceptor
(foreign atom) is suggested. The hole mobility is determined for p‐like wave functions (polar …