The density of donor impurity states in a square GaAs–AlGaAs quantum well under an
intense laser field is calculated taking into account the laser dressing effects on both the …

The Rashba spin-orbit (SO) coupling can flexibly be controlled via an external gate, while
the Dresselhaus term, which mainly depends on quantum confinement, is in general …

Within the framework of effective-mass approximation, using a variational method, the effect
of high-frequency laser field on intersubband transitions and the binding energy of shallow …

In this work, for the first time, the total refractive index (TRICs) and total absorption
coefficients (TACs) of In x Ga 1-x As/GaAs Mathieu quantum dot (MQD) with hydrogenic …

The intersubband transitions in square and parabolic quantum wells under simultaneous
action of the hydrostatic pressure and high-frequency laser field have been investigated. We …

This work considers a guest Lithium atom (Li@ C n) in an endohedral fullerene, embedded
in a quantum plasma modeled by the more general exponential cosine screened Coulomb …

Laser effects on the electronic states in GaAs/Ga1− xAlxAs V-shaped and inverse V-shaped
quantum wells under a static electric field are studied using the transfer matrix method. The …

We study the behavior of excitons in a semiconductor irradiated by a monochromatic,
linearly polarized, intense laser field. By taking the finiteness of the hole effective mass into …

A theoretical study of the effects of a nonresonant intense laser field on the absorption
coefficients and refractive index changes for a two-level system associated with transitions …

The effects of intense terahertz laser and magnetic fields on the photoionization cross
section (PICS) of shallow-donor impurity in semiconductors are investigated within the …