Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
A reliable ultrafast short-circuit protection method for E-mode GaN HEMT
A unique three-step short-circuit protection method is proposed for the 650-V enhancement
mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This method …
mode (E-mode) gallium nitride high-electron mobility transistor (GaN HEMT). This method …
A short-circuit protection circuit with strong noise immunity for GaN HEMTs
J Wu, W Meng, F Zhang, G Dong… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Gallium nitride high electron mobility transistors (GaN HEMTs) show significant advantages
in high frequency and high switching speed applications, which has gathered great …
in high frequency and high switching speed applications, which has gathered great …
Improved de-saturation protection circuits for silicon carbide MOSFET gate drivers
High-performance desaturation or overcurrent protection circuit of the gate-drivers for Silicon
Carbide (SiC) MOSFETs are essential for reliable and robust operation of advanced power …
Carbide (SiC) MOSFETs are essential for reliable and robust operation of advanced power …
Gate driver design for 1.2 kV SiC module with PCB integrated Rogowski coil protection circuit
Wide band-gap materials, eg, Silicon Carbide (SiC), allow the realization of power
semiconductor with superior performance with respect to the traditional Si-based …
semiconductor with superior performance with respect to the traditional Si-based …
An ultra-fast and non-invasive short circuit protection strategy for a WBG power electronics converter with multiple half-bridge legs
This paper presents a novel short circuit protection strategy for a wide-band gap power
electronics converter composed of multiple half-bridge legs. The main approaches of the …
electronics converter composed of multiple half-bridge legs. The main approaches of the …
Multistep soft turn-off time control to suppress the overvoltage of SiC MOSFETs in short-circuit state
M Shim, K Lee, J Kim, K Kim - IEEE Access, 2022 - ieeexplore.ieee.org
Wide-bandgap (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride
(GaN) FETs, have replaced silicon insulated gate bipolar transistors (Si-IGBTs) in recent …
(GaN) FETs, have replaced silicon insulated gate bipolar transistors (Si-IGBTs) in recent …
Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors
CM Kim, HS Yoon, JS Kim, NJ Kim - Electronics, 2024 - mdpi.com
This paper presents a circuit for detecting and protecting against short circuits in E-mode
gallium nitride high-electron-mobility transistors (GaN HEMTs) and analyzes the protection …
gallium nitride high-electron-mobility transistors (GaN HEMTs) and analyzes the protection …
Wide Bandgap Semiconductors for LVDC Solid State Circuit Breaker applications
G Govaerts, U Chatterjee, J Driesen… - 2023 IEEE 10th …, 2023 - ieeexplore.ieee.org
In the quest for energy-efficient Low Voltage Direct Current grids, this paper delves into the
characteristics of wide bandgap semiconductors based on GaN and SiC materials. The …
characteristics of wide bandgap semiconductors based on GaN and SiC materials. The …
A 1.2 kV 400A SiC-MOSFET Based 3L-TNPC Power Module With Improved Hybrid Packaging Method for High-Density Applications
Three-level T-type neutral-point-clamped converters (3L-TNPC) are widely used in motor
drive and PV applications because of the higher efficiency, improved output THD, and lower …
drive and PV applications because of the higher efficiency, improved output THD, and lower …