The technological evolution has been progressing for centuries and will possibly increase at a higher rate in the 21st century. Currently, in this age of nanotechnology, the discovery of …
R Wu, Q Tao, J Li, W Li, Y Chen, Z Lu, Z Shu… - Nature …, 2022 - nature.com
Two-dimensional semiconductors such as layered transition metal dichalcogenides can offer superior immunity to short-channel effects compared with bulk semiconductors such as …
X Huang, C Liu, P Zhou - npj 2D Materials and Applications, 2022 - nature.com
The shrinking of transistors has hit a wall of material degradation and the specialized electronic applications for complex scenarios have raised challenges in heterostructures …
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and further scaling their gate length down to the sub-10 nm region is becoming extremely …
S Wang, X Liu, P Zhou - Advanced Materials, 2022 - Wiley Online Library
Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …
Y Liu, X Duan, Y Huang, X Duan - Chemical Society Reviews, 2018 - pubs.rsc.org
Two-dimensional semiconductors (2DSCs) have attracted considerable attention as atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of …
As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …
VK Sangwan, MC Hersam - Annual review of physical chemistry, 2018 - annualreviews.org
Two-dimensional (2D) materials have captured the attention of the scientific community due to the wide range of unique properties at nanometer-scale thicknesses. While significant …
As the dimensions of the transistor, the key element of silicon technology, are approaching their physical limits, developing semiconductor technology with novel concepts and …