InAs/GaSb Type‐II Superlattice Detectors
EA Plis - Advances in Electronics, 2014 - Wiley Online Library
InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …
since they were first proposed as an infrared (IR) sensing material more than three decades …
[图书][B] Infrared and terahertz detectors
A Rogalski - 2019 - books.google.com
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …
infrared and terahertz detector technology, from fundamental science to materials and …
Passivation techniques for InAs/GaSb strained layer superlattice detectors
Abstract InAs/(In, Ga) Sb Strained Layer Superlattices (SLSs) have made significant
progress since they were first proposed as an infrared (IR) sensing material more than three …
progress since they were first proposed as an infrared (IR) sensing material more than three …
Edge transport in the trivial phase of InAs/GaSb
We present transport and scanning SQUID measurements on InAs/GaSb double quantum
wells, a system predicted to be a two-dimensional topological insulator. Top and back gates …
wells, a system predicted to be a two-dimensional topological insulator. Top and back gates …
Manufacturability of type-II InAs/GaSb superlattice detectors for infrared imaging
L Höglund, C Asplund, RM von Würtemberg… - Infrared Physics & …, 2017 - Elsevier
Abstract Type-II InAs/GaSb superlattice detectors and focal plane arrays (FPAs) with cut-off
wavelength at 5.1 μm have been studied. For single pixel devices, dark current densities of …
wavelength at 5.1 μm have been studied. For single pixel devices, dark current densities of …
Edge transport in InAs and InAs/GaSb quantum wells
S Mueller, C Mittag, T Tschirky, C Charpentier… - Physical Review B, 2017 - APS
We investigate low-temperature transport through single InAs quantum wells and broken-
gap InAs/GaSb double quantum wells. Nonlocal measurements in the regime beyond bulk …
gap InAs/GaSb double quantum wells. Nonlocal measurements in the regime beyond bulk …
Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation
We report on SU-8 passivation for reducing surface leakage current in type-II InAs/GaSb
strained layer superlattice detectors (λ 100% cut-off∼ 12 μ m). The electrical behavior of …
strained layer superlattice detectors (λ 100% cut-off∼ 12 μ m). The electrical behavior of …
Dark current analysis of InAs/GaSb type II superlattice infrared detectors
X Wang, J Li, Y Yan, M Zhang, T Wen… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The infrared imaging performance of type-II superlattice (T2SL) has been widely used in civil
and aerospace fields. Due to the special band structure and material properties, the T2SL …
and aerospace fields. Due to the special band structure and material properties, the T2SL …
[HTML][HTML] Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain
In this paper, structural, optical and electrical characterizations of longwave infrared barrier
detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated …
detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated …
Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors
The surface leakage in InAs/GaSb type-II superlattice (T2SL) is studied experimentally and
theoretically for photodiodes with small sizes down to 10× 10 μm 2. The dependence of dark …
theoretically for photodiodes with small sizes down to 10× 10 μm 2. The dependence of dark …