Scanning cathodoluminescence microscopy

CM Parish, PE Russell - Advances in Imaging and Electron Physics, 2007 - Elsevier
Publisher Summary Cathodoluminescence (CL) is light emitted by a solid material because
of irradiation by an electron beam. When the spectral distribution of light is studied, CL …

Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy

R Sugie, K Kosaka, H Seki, H Hashimoto… - Journal of Applied …, 2013 - pubs.aip.org
An experimental method to determine the temperature dependence of residual stress in
three-dimensional (3D) structures was developed using polarized Raman spectroscopy …

Investigation of stress-induced defects in shallow trench isolation by cathodoluminescence and Raman spectroscopies

R Sugie, K Matsuda, T Ajioka, M Yoshikawa… - Journal of applied …, 2006 - pubs.aip.org
We have applied cathodoluminescence (CL) and Raman spectroscopies to shallow trench
isolation (STI) processes in large scale integration to investigate crystalline defects and …

Semi-quantitative analysis of the depth distribution of radiative recombination centers in silicon power devices by cross-sectional cathodoluminescence

R Sugie, K Inoue, M Yoshikawa - Journal of Applied Physics, 2012 - pubs.aip.org
A procedure to obtain the semi-quantitative depth distribution of radiative recombination
centers in silicon power devices has been developed using cross-sectional …

Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors

R Sugie, T Mitani, M Yoshikawa, Y Iwata… - Japanese Journal of …, 2010 - iopscience.iop.org
Cross-sectional cathodoluminescence (CL) measurements were applied to the study of
electron-irradiated punch-through insulated gate bipolar transistors (IGBTs) to investigate …

Applications of Raman, IR, and CL Spectroscopy

M Yoshikawa - … Techniques for Semiconductors: Raman, Infrared, and …, 2023 - Springer
This chapter describes the latest analysis examples, combing Raman, IR, and CL
spectroscopy. Strained Si techniques, such as incorporating SiGe is essential forboost …

Application of cathodoluminescence to SiGe epitaxial process control

T Koide, R Sugie, Y Ibara… - 2007 International …, 2007 - ieeexplore.ieee.org
A new in-line monitoring method to easily and quickly detect dislocations and defects
generated before and after the SiGe epitaxial process is storongly needed. We focus on the …

シリコン結晶欠陥評価へのカソードルミネッセンス法の応用

杉江隆一, 内田智之, 小坂賢一 - 表面科学, 2016 - jstage.jst.go.jp
抄録 Cathodoluminescence (CL) is a kind of light emission as a result of electron beam
irradiation to various materials. In the measurement technique using CL, scanning electron …