Circuit level analysis of a dual material graded channel (DMGC) cylindrical gate all around (CGAA) FET at nanoscale regime
PK Mudidhe, BR Nistala - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
Gate-all around (GAA) device is one of the cutting-edge technologies in the present
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …
A 7T high stable and low power SRAM cell design using QG-SNS FinFET
Abstract System on Chip (SoC) low power cache memories are in great demand. This
requires novel devices like FinFET instead of MOSFET. FinFET comes out as a multi-gate …
requires novel devices like FinFET instead of MOSFET. FinFET comes out as a multi-gate …
Subthreshold current modeling of stacked dielectric triple material cylindrical gate all around (SD-TM-CGAA) Junctionless MOSFET for low power applications
Abstract Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA)
Junctionless MOSFET has been explored for low power applications. This paper presents …
Junctionless MOSFET has been explored for low power applications. This paper presents …
Temperature-dependent characteristics and electrostatic threshold voltage tuning of accumulated body MOSFETs
Narrow-channel accumulated body nMOSFET devices with p-type side gates surrounding
the active area have been electrically characterized between 100 and 400 K with varied side …
the active area have been electrically characterized between 100 and 400 K with varied side …
New growth mechanism of InAs-GaSb core-shell nanowires with polygonal triangular pyramids and quantum dots grown by MOCVD
X Wang, X Yang, T Yang - Vacuum, 2024 - Elsevier
In this paper, new growth mechanism of InAs/GaSb heterojunction nanowires grown by
MOCVD has been investigated. A spear-shaped structure was firstly formed at the top of …
MOCVD has been investigated. A spear-shaped structure was firstly formed at the top of …
GAAFET based SRAM Cell to Enhance Stability for Low Power Applications
This paper examines the performance of the proposed low DIBL Gate all around FET
(GAAFET) based 6 T and 7 T SRAM cells on enhancing stability for low power applications …
(GAAFET) based 6 T and 7 T SRAM cells on enhancing stability for low power applications …
Gate controllability enhancement in various GAA MOSFETS and their dependence on various parameters
N Garg, M Choudhary, K Mehendiratta… - 2024 15th …, 2024 - ieeexplore.ieee.org
The main aim of this paper is to investigate the impact of gate radius variation and dielectric
material change on Gate-All-Around (GAA) MOSFETs in terms of gate controllability and …
material change on Gate-All-Around (GAA) MOSFETs in terms of gate controllability and …
Nanowire Field Effect Transistor with Multiple Gates: A Simulation Study
CRS Dev, M Jeevan, MC Kumar… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
This paper gives analysis and simulation of performance of different gates present in Multi-
gate Nanowire FET (MG-NWFETs) such as, tri, pi, double, omega and gate all around …
gate Nanowire FET (MG-NWFETs) such as, tri, pi, double, omega and gate all around …
Development and Optimization of Electric-Double-Layer Gated Transistors Based on Low-Dimensional Materials: Gate-All-Around InAs Nanowire Arrays and …
JW Morrell - 2024 - search.proquest.com
Abstract Electric-double-layer (EDL) gating is a promising alternative to conventional gating
methods for field-effect transistors (FETs), with potential applications spanning current logic …
methods for field-effect transistors (FETs), with potential applications spanning current logic …
Assessment of hot carrier stress induced threshold voltage shift in gate-all-around MOSFETs
This paper presents an investigation of hot-carrier stress in GAA MOSFETs under different
stress conditions. Stress creates hot electrons at the surface of the devices which results in a …
stress conditions. Stress creates hot electrons at the surface of the devices which results in a …