The need for dimensional micro and nano metrology is evident, and as critical dimensions
are scaled down and geometrical complexity of objects is increased, the available …

The requirements on the use of scanning electron microscopy (SEM) as a measurement
technique for the process control of dimensional parameters are most challenging in the …

The width and shape of 10 nm to 12 nm wide lithographically patterned SiO 2 lines were
measured in the scanning electron microscope by fitting the measured intensity vs. position …

Applications of subwavelength-diameter optical fibres in nonlinear optics require precise
knowledge of the submicrometre fibre waist diameter. We demonstrate a new technique for …

The semiconductor electronics industry places significant demands upon secondary
electron imaging to obtain dimensional measurements that are used for process control or …

Monte Carlo simulation methods for the study of electron beam interaction with solids have
been mostly concerned with specimens of simple geometry. In this article, we propose a …

The ability of a critical dimension scanning electron microscope (CD-SEM) to resolve
differences in the widths of two lines is determined by measurement repeatability and any …

Measurements of critical dimensions (CDs), roughness, and other dimensional aspects of
semiconductor electronics products rely upon secondary electron (SE) images in the …

A new Monte Carlo technique for the simulation of secondary electron (SE) and
backscattered electron (BSE) of scanning electron microscopy (SEM) images for an …

Critical dimension scanning electron microscope (CD-SEM) metrology has long used
empirical approaches to determine edge locations. While such solutions are very flexible …