[图书][B] Dielectrics in electric fields: Tables, Atoms, and Molecules
GG Raju - 2017 - taylorfrancis.com
Dielectrics in Electric Fields explores the influence of electric fields on dielectric—ie, non-
conducting or insulating—materials, examining the distinctive behaviors of these materials …
conducting or insulating—materials, examining the distinctive behaviors of these materials …
Atomic Layer Deposition Films for Resistive Random‐Access Memories
Resistive random‐access memory (RRAM) stands out as a promising memory technology
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …
All-metal-nitride RRAM devices
This letter presents the novel CMOS-compatible all-metal-nitride resistive random access
memory (RRAM) devices based on the TiN/AlN/TiN stack. The device has low operation …
memory (RRAM) devices based on the TiN/AlN/TiN stack. The device has low operation …
High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence
TJ Yen, A Chin, V Gritsenko - Scientific reports, 2020 - nature.com
All-nonmetal resistive random access memory (RRAM) with a N+–Si/SiNx/P+–Si structure
was investigated in this study. The device performance of SiNx developed using physical …
was investigated in this study. The device performance of SiNx developed using physical …
Nitride memristors
We demonstrate a promising new material system for ionic resistive switches: nitride
memristors. The switching material is an AlN film, deposited using atomic layer deposition …
memristors. The switching material is an AlN film, deposited using atomic layer deposition …
Effect of electrode materials on AlN-based bipolar and complementary resistive switching
We report the complementary resistive switching (CRS) behaviors in aluminum nitride (AlN)-
based memory devices as the promising new material system for large-scale integration of …
based memory devices as the promising new material system for large-scale integration of …
Realization of preferential (100) oriented AlN thin films on Mo coated Si substrate using reactive RF magnetron sputtering
Abstract a-axis (100) oriented Aluminium Nitride (AlN) favours transverse acoustic wave
applications. We have been able to realize preferential (100) oriented AlN films on …
applications. We have been able to realize preferential (100) oriented AlN films on …
Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications
Abstract Al/AlN/p-Si diode was fabricated via thermal evaporation. The electrical properties
of the structure were examined under various temperatures, illuminations, and frequencies …
of the structure were examined under various temperatures, illuminations, and frequencies …
Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films
M Gillinger, M Schneider, A Bittner, P Nicolay… - Journal of Applied …, 2015 - pubs.aip.org
Aluminium nitride (AlN) is a promising material for challenging sensor applications such as
process monitoring in harsh environments (eg, turbine exhaust), due to its piezoelectric …
process monitoring in harsh environments (eg, turbine exhaust), due to its piezoelectric …
Investigation of AlN-based Schottky type photodetector in visible light detection
In this study, we fabricated an AlN-based Schottky photodetector by thermal evaporation
technique using commercial AlN/n-Si heterojunction which was fabricated by hydride vapor …
technique using commercial AlN/n-Si heterojunction which was fabricated by hydride vapor …