The solid state physics programme at ISOLDE: Recent developments and perspectives

K Johnston, J Schell, JG Correia… - Journal of Physics G …, 2017 - iopscience.iop.org
Solid state physics (SSP) research at ISOLDE has been running since the mid-1970s and
accounts for about 10%–15% of the overall physics programme. ISOLDE is the world …

Experimentally evaluating the origin of dilute magnetism in nanomaterials

LMC Pereira - Journal of Physics D: Applied Physics, 2017 - iopscience.iop.org
Reports of room-temperature ferromagnetism continue to emerge for an ever-growing range
of nanomaterials with a small or even vanishing concentration of magnetic atoms. Dilute …

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

B Abera, B Mekuye - Nano Select, 2024 - Wiley Online Library
The main objective of the review was to investigate the ferromagnetism of diluted magnetic
semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has …

Ferromagnetic Mn-implanted GaP: Microstructures vs magnetic properties

Y Yuan, R Hübner, F Liu, M Sawicki… - … Applied Materials & …, 2016 - ACS Publications
Ferromagnetic GaMnP layers were prepared by ion implantation and pulsed laser annealing
(PLA). We present a systematic investigation on the evolution of microstructure and …

Spin-dependent tunneling in semiconductor heterostructures with a magnetic layer

IV Rozhansky, KS Denisov, NS Averkiev, IA Akimov… - Physical Review B, 2015 - APS
We present a theory that describes the appearance of circular polarization of the
photoluminescence (PL) in ferromagnet-semiconductor hybrid heterostructures due to the …

A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

M Khalid, K Gao, E Weschke, R Hübner… - Journal of Applied …, 2015 - pubs.aip.org
The manganese induced magnetic, electrical, and structural modification in InMnP epilayers,
prepared by Mn ion implantation and pulsed laser annealing, are investigated in the …

[PDF][PDF] The interplay between localization and magnetism in III-Mn-V dilute ferromagnetic semiconductors

Y Yuan - 2017 - core.ac.uk
III-Mn-V dilute ferromagnetic semiconductors (DFSs) have been treated as a candidate
material for semiconductor spintronics due to their intrinsic ferromagnetism mediated by …

Studies of spin-orbit coupling phenomena in magnetic semiconductors

B Howells - 2015 - eprints.nottingham.ac.uk
Hard disk drives (HDDs) have been the dominant secondary memory device in computing
for over 50 years, while more recently magnetoresistive random access memory (MRAM) …

Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga, Mn) As

TAL Lima, U Wahl, A Costa, V Augustyns… - Physical Review B, 2019 - APS
In (Ga, Mn) As, a model dilute magnetic semiconductor, the electric and magnetic properties
are strongly influenced by the lattice sites occupied by the Mn atoms. In particular, the …