Microwave-dependent quantum transport characteristics in near pinched-off GaN/AlGaN field-effect transistors

M Shinozaki, T Abe, K Matsumura, T Aizawa… - Physical Review B, 2024 - APS
Defects in semiconductors, traditionally seen as detrimental to electronic device
performance, have emerged as potential assets in quantum technologies due to their unique …

Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics

T Abe, M Shinozaki, K Matsumura, T Aizawa… - Applied Physics …, 2024 - pubs.aip.org
GaN is expected to be a key material for next-generation electronics due to its interesting
properties. However, current collapse poses a challenge to the application of GaN FETs to …

Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique

C Wen, H Takahashi, SI Ibad, S Nishiyama… - Applied Physics …, 2024 - iopscience.iop.org
With a view to long-term qubit device operation, we report a method to stabilize a silicon
double quantum dot against slow drift in a two-dimensional gate-voltage space based on a …

Automatic detection of single-electron regime of quantum dots and definition of virtual gates using U-Net and clustering

Y Muto, MR Zielewski, M Shinozaki, K Noro… - arXiv preprint arXiv …, 2025 - arxiv.org
To realize practical quantum computers, a large number of quantum bits (qubits) will be
required. Semiconductor spin qubits offer advantages such as high scalability and …

Charge state estimation in quantum dots using a Bayesian approach

M Shinozaki, Y Muto, T Kitada, T Otsuka - arXiv preprint arXiv:2408.03110, 2024 - arxiv.org
Detection of single-electron charges in solid-state nanodevices is a key technique in
semiconductor quantum bit readout for quantum information processing and probing …

Charge sensing of few-electron ZnO double quantum dots probed by radio-frequency reflectometry

K Noro, M Shinozaki, Y Kozuka, K Matsumura… - arXiv preprint arXiv …, 2025 - arxiv.org
Zinc oxide (ZnO) has garnered much attention as a promising material for quantum devices
due to its unique characteristics. To utilize the potential of ZnO for quantum devices, the …