Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
Ferroelectric memristor and its neuromorphic computing applications
Ferroelectric memristors, characterized by spontaneous polarization ferroelectric materials
as a functional layer of memristor, yields unique ferroelectric resistive switching behaviours …
as a functional layer of memristor, yields unique ferroelectric resistive switching behaviours …
Hierarchical exsolution in vertically aligned heterostructures
J Zamudio-García, F Chiabrera… - Nature …, 2024 - nature.com
Metal nanoparticle exsolution from metal oxide hosts has recently garnered great attention
to improve the performance of energy conversion and storage devices. In this study, the …
to improve the performance of energy conversion and storage devices. In this study, the …
Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO2-Based Artificial Neurons
Filamentary-type resistive switching devices, such as conductive bridge random-access
memory and valence change memory, have diverse applications in memory and …
memory and valence change memory, have diverse applications in memory and …
Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties
Defect engineering in valence change memories aimed at tuning the concentration and
transport of oxygen vacancies are studied extensively, however mostly focusing on …
transport of oxygen vacancies are studied extensively, however mostly focusing on …
Enhanced resistive switching performance of hafnium oxide-based devices: Effects of growth and annealing temperatures
SP Swathi, S Angappane - Journal of Alloys and Compounds, 2022 - Elsevier
Although hafnium oxide-based resistive switching (RS) devices have been explored
extensively, extremely high operating voltages and currents hinder their application in low …
extensively, extremely high operating voltages and currents hinder their application in low …
Epitaxial Growth of Aurivillius Bi3Fe2Mn2Ox Supercell Thin Films on Silicon
Nanoelectronic devices integrated with functional complex oxides have drawn much
attention in recent years. However, due to material and processing compatibility issues …
attention in recent years. However, due to material and processing compatibility issues …
Integration of CeO2-Based Memristor with Vertically Aligned Nanocomposite Thin Film: Enabling Selective Conductive Filament Formation for High-Performance …
The CeO2-based memristor has attracted significant attention due to its intrinsic resistive
switching (RS) properties, large on/off ratio, and great plasticity, making it a promising …
switching (RS) properties, large on/off ratio, and great plasticity, making it a promising …
Symmetric bipolar resistive switching in copper oxide nanostructure/ITO lateral device under exposure to atmospheric oxygen and application in artificial synaptic …
Capacitively coupled resistive switching behaviour was observed in a planar-geometry two-
terminal device based on nanostructures of copper oxide as active material and indium tin …
terminal device based on nanostructures of copper oxide as active material and indium tin …
High on/off ratio SiO 2-based memristors for neuromorphic computing: understanding the switching mechanisms through theoretical and electrochemical aspects
Memristors have emerged as promising elements for brain-inspired computing applications,
yet the understanding of their switching mechanisms, particularly in valence change …
yet the understanding of their switching mechanisms, particularly in valence change …