In this paper, we systematically investigate the structural, mechanical, optical and electronic
properties of novel two-dimensional XY (X= Al, Ga, In; Y= N, P, As) monolayers in the double …

We explore structural, electronic, and magnetic properties of two-dimensional (2D) gallium
nitride (GaN) monolayer (ML) doped with different elements belonging to the groups III–VI …

First-principle calculations have been executed to examine the optical and electronic
properties of two-dimensional GaN/BAs heterostructures with three possible stacking orders …

Using first-principles calculations combined with a semiempirical van der Waals dispersion
correction, we have investigated structural parameters, mixing enthalpies, and band gaps of …

GaN-based semiconductors are promising materials for solid-state optoelectronic
applications. However, the strong internal electrostatic field (IEF) along the [0001] direction …

The synthesis of two-dimensional GaN offers new opportunities for this important
commercial semiconductor in optoelectronic devices because the extreme quantum …

Functional defects in periodic media confine waves—acoustic, electromagnetic, electronic,
spin, etc.—in various dimensions, depending on the structure of the defect. While defects are …

Two-dimensional ferroelectric material Al 2 O 3 has mutually coupled in-plane and out-of-
plane ferroelectric polarization which realize reversal polarization under the electric field. In …

We propose a rigorous method to classify the dimensionality of wave confinement by
utilizing unsupervised machine learning to enhance the accuracy of our recently presented …

As the characteristic dimensions of modern top-down devices are getting smaller, such
devices reach their operational limits imposed by quantum mechanics. Thus, two …