Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3) has
recently aroused increasing attention in the area for high-power electronics, power switch for …

Gallium oxide (Ga2O3) emerges as a promising ultrawide bandgap semiconductor, which is
expected to surpass the performance of current wide bandgap materials, like GaN and SiC …

Herein, a high‐performance β‐gallium oxide (β‐Ga2O3) metal–oxide–semiconductor field‐
effect transistor (MOSFET) on sapphire substrate with a high breakdown voltage of more …

A β-Ga 2 O 3 field effect transistor (FET) outperforms a GaN FET in Baliga's figure of merit
(FOM) by 400% and Huang's chip area manufacturing figure of merit by 330%, suggesting …

Here, we report on heteroepitaxial α-Ga 2 O 3 MOSFETs with a breakdown voltage (BV) of
2.3 kV at a specific on-resistance of 335 mΩ cm 2. High-quality α-Ga 2 O 3 layers were …

The emergence of several technology options and the ever-broadening range of
applications (eg, automotive, smart grids, solar/wind farms) for power electronic devices …

The device applications of β-Ga2O3 semiconductors are limited by the absence of effective
acceptors to form β-Ga2O3 p–n homojunctions. Herein, a WSe2/β-Ga2O3 p–n …

β-Ga2O3-based MOSFETs hold significant promise for high-power device applications due
to their wide band gap and high breakdown voltage. However, the direct integration of β …