In-memory computing with resistive switching devices

D Ielmini, HSP Wong - Nature electronics, 2018 - nature.com
Modern computers are based on the von Neumann architecture in which computation and
storage are physically separated: data are fetched from the memory unit, shuttled to the …

In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and …

A Amirsoleimani, F Alibart, V Yon, J Xu… - Advanced Intelligent …, 2020 - Wiley Online Library
The low communication bandwidth between memory and processing units in conventional
von Neumann machines does not support the requirements of emerging applications that …

Thousands of conductance levels in memristors integrated on CMOS

M Rao, H Tang, J Wu, W Song, M Zhang, W Yin… - Nature, 2023 - nature.com
Neural networks based on memristive devices,–have the ability to improve throughput and
energy efficiency for machine learning, and artificial intelligence, especially in edge …

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

[HTML][HTML] Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

D Ielmini - Microelectronic Engineering, 2018 - Elsevier
The human brain can perform advanced computing tasks, such as learning, recognition, and
cognition, with extremely low power consumption and low frequency of neuronal spiking …

In-memory computing with emerging memory devices: Status and outlook

P Mannocci, M Farronato, N Lepri, L Cattaneo… - APL Machine …, 2023 - pubs.aip.org
In-memory computing (IMC) has emerged as a new computing paradigm able to alleviate or
suppress the memory bottleneck, which is the major concern for energy efficiency and …

RRAM-based synapse devices for neuromorphic systems

K Moon, S Lim, J Park, C Sung, S Oh, J Woo… - Faraday …, 2019 - pubs.rsc.org
Hardware artificial neural network (ANN) systems with high density synapse array devices
can perform massive parallel computing for pattern recognition with low power consumption …

Accurate program/verify schemes of resistive switching memory (RRAM) for in-memory neural network circuits

V Milo, A Glukhov, E Pérez, C Zambelli… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Resistive switching memory (RRAM) is a promising technology for embedded memory and
its application in computing. In particular, RRAM arrays can provide a convenient primitive …

Brain-inspired computing via memory device physics

D Ielmini, Z Wang, Y Liu - APL Materials, 2021 - pubs.aip.org
In our brain, information is exchanged among neurons in the form of spikes where both the
space (which neuron fires) and time (when the neuron fires) contain relevant information …