We report on the generation of supercontinuum radiation from 2 to 20 μm in a 67 mm long
GaAs crystal pumped by a train of 3 ps CO_2 laser pulses. Temporal measurements indicate …

The increase of device lifetime and reliability of THz photomixers will play an essential role
in their possible future application. Therefore, their optimal work conditions/operation range …

We report on the generation of a train of∼ 2 ps, 10 μm laser pulses via multiple four-wave
mixing and compression of an infrared laser beat-wave propagating in the negative group …

We study the structural and chemical transformations induced by focused laser beam in
GaAs nanowires with an axial zinc-blende/wurtzite (ZB/WZ) heterostructure. The …

Surface acoustic wave devices have been fabricated on a GaAs 100 substrate to
demonstrate the capability of 2D Raman microscopy as an imaging technique for acoustic …

We propose a scheme for generating and amplifying coupled optical TE and TM waves in
the mid-IR range provided by a grating formed by a space charge wave in a planar …

We have carried out a detailed temperature-dependent Raman scattering investigation on
coupled longitudinal–optical phonon–plasmon modes in N–In codoped p-type ZnO thin films …

Nanometric-width GaAs grating lines showing high aspect (height/width) ratio of up to 30,
without roughness or shape deviation are reported. They were obtained by HVPE …

To prepare patterned graphene ribbons with fixed directions and positions can promote the
applications of graphene in optoelectronic devices. The templated chemical vapor …

The authors present a detailed investigation of paraferroelectric phase transition
temperature (TC) of Sr Ti O 3 ultrathin films grown by molecular beam epitaxy on Si …