CY Hsu, MA Mustafa, A Yadav, KM Batoo… - Journal of Molecular …, 2024 - Springer
Abstract Context The abilities of Co-Al18P18, Ni-Al21N21, Fe-B24N24, Mn-B27P27, Ti-C60 and Cu-Si72 as catalysts for N2-RR to create the NH3 are investigated by theoretical levels …
SU Yun, PC Lee, J Spiegelman, AC Kummel - Applied Surface Science, 2024 - Elsevier
Ga-polar GaN thin films and N-polar GaN thin films were fabricated by using thermal ALD and plasma assisted ALA processes, respectively. The polarity of GaN wurtzite thin films was …
D Chen, R Bi, L Xun, X Li, Q Hai, Y Qi, X Zhao - Materials, 2025 - mdpi.com
Gallium-based light-emitting diodes (LEDs), including AlGaInP and GaN, have become the most widely used light-emitting devices in modern scientific research and practical …
ZJ Rad, M Miettinen, M Punkkinen, P Laukkanen… - Applied Surface …, 2024 - Elsevier
Cleaning semiconductor surfaces by atomic hydrogen or hydrogen plasma has gained significant interest because such a dry-cleaning method enables to reduce consumption of …
Here, the abilities of Fe-Si42, Fe-Al21N21, Cu-C60, Cu-B30P30, Fe-SiNT (9, 0), Fe-AlNNT (9, 0), Cu-CNT (6, 0) and Cu-BPNT (6, 0) as nano-catalysts of OER and ORR processes are …
Here, the capacities of S-C48, SC-nanotube, S-B24N24 and S-BN-nanotube in Mg-ion and Na-ion batteries are investigated. The Ecohesive of Si48, C48, S-C48, B24N24, S-B24N24 …
In this work, the abilities of Ni-C38, Ni-B19N19 and Ni-Si38 for oxygen reduction reaction (ORR) are investigated. The Eformation of Ni-C38, Ni-B19N19 and Ni-Si38 are− 4.72,− 5.96 …