Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers
Comprehensive experimental and theoretical studies are reported on the infrared
reflectance (IRR)/transmittance (IRT) spectra to empathize the vibrational and structural …
reflectance (IRR)/transmittance (IRT) spectra to empathize the vibrational and structural …
Processing and characterization of a free-standing bulk polycrystalline GaN layer
MEA Samsudin, MIM Taib, E Alias, SN Waheeda… - Journal of Alloys and …, 2018 - Elsevier
This work reports a new processing of producing a free-standing bulk polycrystalline GaN
layer. Specifically, a∼ 0.05 mm thick GaN layer was deposited onto a Si substrate by e …
layer. Specifically, a∼ 0.05 mm thick GaN layer was deposited onto a Si substrate by e …