Solution-processed semiconductors are in demand for present and next-generation
optoelectronic technologies ranging from displays to quantum light sources because of their …

Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …

Growth, structural and optical properties of GaN quantum dots are reviewed, with a special
emphasis on plasma-assisted molecular beam epitaxy. The versatility of this technique …

Single-dot spectroscopy was used to determine the temperature dependence of the ground-
state exciton energy E (T) in self-assembled In x Ga 1− x As∕ GaAs quantum dots (QDs) …

Indistinguishability is a crucial element for quantum interference in scalable quantum
information processing. Here, we demonstrate the ability to erase the distinguishability of a …

III-nitride quantum dots are proving to be promising for application to single photon emitting
devices. Research around the globe is revealing several interesting properties of these …

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The
single-photon nature of the emission was verified by the second-order correlation function …

Direct observation of large permanent dipole moments of excitonic complexes in InGaN/GaN
quantum dots is reported. Characteristic traces of spectral diffusion, observed in …

We report microphotoluminescence studies of single GaN∕ AlN quantum dots grown by
molecular beam epitaxy on Si (111) substrates. Small groups of emission lines characterize …

Coupling of acoustic phonons to excitons in single wurtzite-type GaN/AlN quantum dots is
investigated in detail by cathodoluminescence experiments and compared to theory …