Review of progress in calculation and simulation of high-temperature oxidation
High-temperature oxidation can precipitate chemical and mechanical degradations in
materials, potentially leading to catastrophic failures. Thus, understanding the mechanisms …
materials, potentially leading to catastrophic failures. Thus, understanding the mechanisms …
Investigations on line-edge roughness (LER) and line-width roughness (LWR) in nanoscale CMOS technology: Part II–experimental results and impacts on device …
In the part I of this paper, the correlation between line-edge roughness (LER) and line-width
roughness (LWR) is investigated by theoretical modeling and simulation. In this paper …
roughness (LWR) is investigated by theoretical modeling and simulation. In this paper …
[HTML][HTML] Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires
Self-limiting oxidation of nanowires has been previously described as a reaction-or diffusion-
controlled process. In this letter, the concept of finite reactive region is introduced into a …
controlled process. In this letter, the concept of finite reactive region is introduced into a …
Gated Si-tip with on-tip integrated gate-all-around field effect transistor for actively controlled field electron emission
M Zeng, Y Huang, Y Huang, J Chen… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
Gated Si-tip with on-tip integrated gate-all-around field effect transistor using hyperbolic
nano-channel (Hy-GAAFET) for actively controlled field electron emission is presented. Fully …
nano-channel (Hy-GAAFET) for actively controlled field electron emission is presented. Fully …
[HTML][HTML] Precise fabrication of uniform sub-10-nm-diameter cylindrical silicon nanopillars via oxidation control
S Ye, K Yamabe, T Endoh - Scripta Materialia, 2021 - Elsevier
Abstract Silicon (Si) nanopillar (NP)-based gate-all-around metal–oxide–semiconductor field-
effect transistors (MOSFETs) are considered the primary components of next-generation …
effect transistors (MOSFETs) are considered the primary components of next-generation …
Oxidation of silicon nanopillars
S Ye, K Yamabe, T Endoh - The Journal of Physical Chemistry C, 2021 - ACS Publications
Systematic investigation of dry oxidation of sub-100 nm diameter Si nanopillars (NPs) of
various diameters under varying conditions reveals that at 900° C, the oxidation involves a …
various diameters under varying conditions reveals that at 900° C, the oxidation involves a …
[HTML][HTML] TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing
Thermal oxidation is a key step for the fabrication of vertical gate-all-around nanowire field-
effect transistors (GAA-NW-FETs). It is used after the etching of nanopillars from the silicon …
effect transistors (GAA-NW-FETs). It is used after the etching of nanopillars from the silicon …
Oxidation-induced stress in Si nanopillars
S Ye, K Yamabe, T Endoh - Journal of Materials Science, 2019 - Springer
In this work, we investigate the microstructure and oxidation of Si nanopillars and report that
the oxidation at the sidewall of Si pillars is initially retarded (the so-called self-limiting) and …
the oxidation at the sidewall of Si pillars is initially retarded (the so-called self-limiting) and …
Non-uniaxial stress-assisted fabrication of nanoconstriction on vertical nanostructured Si
M Zeng, X Li, Y Huang, Z Huang, R Zhan… - …, 2019 - iopscience.iop.org
Vertically aligned Si nanoconstrictions have potential for applications of electronic, photonic
and phononic nanodevices. Herein, we report a featured method by utilizing the non …
and phononic nanodevices. Herein, we report a featured method by utilizing the non …
Gate-all-around silicon nanowire transistor technology
As a promising alternative to the fundamental device structure, the gate-all-around silicon
nanowire transistor (GAA SNWT) has been studied extensively for decades. In this chapter …
nanowire transistor (GAA SNWT) has been studied extensively for decades. In this chapter …