Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures
The strategic integration of low‐dimensional InAs‐based materials and emerging van der
Waals systems is advancing in various scientific fields, including electronics, optics, and …
Waals systems is advancing in various scientific fields, including electronics, optics, and …
InAs nanowire visible-infrared detector photoresponse engineering
This review summarizes the operational principles of Indium Arsenide (InAs) nanowire
photodetectors under different light conditions and the various approaches designed to …
photodetectors under different light conditions and the various approaches designed to …
Ternary 2D Layered Material FePSe3 and Near‐Infrared Photodetector
T Xu, M Luo, N Shen, Y Yu, Z Wang… - Advanced Electronic …, 2021 - Wiley Online Library
The preparation of ternary 2D layered material (2DLM) FePSe3 and field‐effect transistor
(FET) type photodetector are investigated. By advancing an optimized chemical vapor …
(FET) type photodetector are investigated. By advancing an optimized chemical vapor …
Fast Response Self-Powered UV–Vis–NIR Broadband Photodetector Based on a Type II Heterojunction of AgIn5Se8/FePSe3
Q Lu, L Xu, Y Ren, J Gao, Y Chen, J Song… - ACS Applied …, 2022 - ACS Publications
Ternary layered materials with small band gaps are prospective candidates for future UV–
Vis–NIR broadband photodetectors, which show multiple degrees of freedom for tailoring …
Vis–NIR broadband photodetectors, which show multiple degrees of freedom for tailoring …
Surface-states-modulated high-performance InAs nanowire phototransistor
We report a high-performance InAs nanowire phototransistor with the photoresponse
mechanism governed by the gate-controlled surface states. Detailed characterizations …
mechanism governed by the gate-controlled surface states. Detailed characterizations …
High-performance room-temperature UV-IR photodetector based on the InAs nanosheet and its wavelength-and intensity-dependent negative photoconductivity
Low-dimensional narrow-band-gap III–V semiconductors have great potential in high-
performance electronics, photonics, and quantum devices. However, high-performance …
performance electronics, photonics, and quantum devices. However, high-performance …
[HTML][HTML] Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors
InAs nanowire-based back-gated field-effect transistors realized starting from individual InAs
nanowires are investigated at different temperatures and as building blocks of inverter …
nanowires are investigated at different temperatures and as building blocks of inverter …
Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics
Epitaxial InAs-based nanowire (NW) arrays have recently gained attention as promising
materials for infrared optoelectronics. To shift the spectral sensitivity of NW-based …
materials for infrared optoelectronics. To shift the spectral sensitivity of NW-based …
Design of InAs nanosheet arrays with ultrawide polarization-independent high absorption for infrared photodetection
InAs nanowires have been considered as good candidates for infrared photodetection.
However, one-dimensional geometry of a nanowire makes it unsuitable for broadband light …
However, one-dimensional geometry of a nanowire makes it unsuitable for broadband light …
Room-temperature photoconductivity in superconducting tungsten meander wires
Superconducting nanowires have attracted much interest for developing single photon
detectors (SPDs), transition edge sensors (TESs), bolometers, and other devices, as they …
detectors (SPDs), transition edge sensors (TESs), bolometers, and other devices, as they …