In this paper, we present results from the simulations of a submicrometer AlGaN/GaN high-
electron-mobility transistor (HEMT) by using an in-house electro-thermal Monte Carlo …

Planar Gunn diodes based on doped GaN active layers with different geometries have been
fabricated and characterized. Gunn oscillations have not been observed due to the …

This article presents a hybrid artificial intelligence (AI)-thermal model for the determination of
the current and lattice temperature of a device under a given bias voltage. The model is …

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric
shape, so-called self-switching diodes, are presented. A particular geometry for the …

The performances of GaAs-based Gunn diodes with notch-δ-doped structures are studied in
this work. The δ-doped effect is analysed using Monte Carlo modelling in terms of temporal …

In this paper, we report an analysis of reverse current mechanisms observed in GaN
Schottky barrier diodes leading to hysteretic behavior of the I–V curves at low temperature …

In this work, by means of Monte Carlo (MC) simulations, the current responsivity of
AlGaN/GaN HEMTs operating as zero-bias detectors is analyzed, reaching the THz …

By means of Monte Carlo simulations of gallium nitride (GaN) planar Gunn diodes, the
epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh …

The influence of thermal effects in AlGaN/GaN HEMTs is studied by means of Monte Carlo
simulations. Measured output and transfer characteristics of a transistor are well reproduced …

In this article, by means of a 2-D ensemble Monte Carlo simulator, the Schottky barrier
diodes (SBDs) with realistic geometries based on GaAs and GaN are studied as promising …