Transistor miniaturization and reduction in power consumptions, are major driving factor for
designing the nanoscale transistor. But the impact of process variation on device …

A shallow-trenched Lateral Double-Diffused MOSFET with folded drift region (FD LDMOS) is
proposed in this paper. The new structure divides the drift region into two parts. The left side …

Multilevel inverters (MLI) have gained a significant emphasis in the area of renewable
energy applications in recent years. The popularity of MLIs is due to their ability to efficiently …

In this work, the influences of special environments (hydrogen gas and high temperature,
high humidity environments) on the performance of three types of SiC MOSFETs are …

In this paper, we present a novel lateral double-diffused metal-oxide-semiconductor
(LDMOS) transistor for high-temperature and high breakdown voltage applications. The key …

High-speed PLL is highly demanding with the advancement in the VLSI market. PLL
performance gets affected due to bandwidth limitation. This paper presents third-order …

A split-stepped gate field plate design has been incorporated on a gallium oxide (Ga2O3)
metal-oxide semiconductor field-effect transistor (MOSFET). The aim of the present work is to …

Novel performance improvement technology is developed for an ultrathin Double Silicon-on-
Insulator (DSOI) Lateral Double-diffused Metal–Oxide–Semiconductor (LDMOS) with a …

In recent years, breakthroughs in electronics technology have resulted in upgrades in the
physical properties of the metal oxide semiconductor field effect transistor (MOSFET) toward …

In this paper, some changes carried out in the LDMOS known as MOSFET1 by utilizing
trench known as MOSFET2. In the proposed device silicon material acts as channel material …