Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …

Aluminium nitride (AlN) crystalline substrate has emerged as a striking material and
received tremendous attention for applications in high power electronics (HPE), deep …

Beryllium has long been predicted by first principle theory as the best p‐type dopant for GaN
and AlN. But experimental validation of these theories has not, until now, borne out the …

We report on the growth and characterization of bulk AlN crystals prepared using five
different growth conditions (seed temperatures and temperature differences between source …

Energy structure and electron coupling with local lattice vibrations have been investigated
for deep centres in AlN using hybrid functional density functional theory. Local phonon …

In this work, we study the absorption properties of AlN in the range of 1.5–5.5 eV, as well as
the metastable change in absorption induced by ultraviolet (UV) irradiation …

The influence of the high-temperature (T= 1880° C) diffusion of beryllium ions on the
properties of single-crystal aluminum nitride is studied. It is shown that the postgrowth …

The electronic and magnetic properties of the zinc-blende aluminum nitride doped with V
and Cr are studied using the density functional theory (DFT), namely the KKR-CPA-PBE …

The high-temperature diffusion of an acceptor impurity of beryllium (Be) into bulk single-
crystal aluminum nitride (AlN) has been studied. It is shown that the introduction of Be leads …

Semi-insulating GaN and UV-transparent AlN are in demand in optoelectronics based on III-
nitrides. Carbon (C) as an impurity is responsible for these properties of the materials …