This article presents a comprehensive analysis of the terahertz (THz) rectification process
with modern high-speed silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) …

Low-power cryogenic low-noise amplifiers (LNAs) are desired to ease the cooling
requirements of ultra-sensitive cryogenically cooled instrumentation. In this paper, the …

This work focuses on a systematic analysis of the potential and limitations of modern SiGe
HBT devices for broadband passive room-temperature detection in the lower THz range …

Using forward‐biased base–collector voltage (VBC) in high‐speed circuits is usually not
attractive due to the performance degradation compared with biasing heterojunction bipolar …

With the scaling of technology, the computing industry is experiencing a shift from multi-core
to many-core architectures. However, traditional metallic-based on-chip interconnects may …

Advanced SiGe HBTs maintain quite reasonable performance even at a forward biased
base-collector junction. The associated operation in saturation enables a significant …

This letter presents a power consumption reduction aspect for a 100-GHz low-noise
amplifier (LNA). Two designs implemented in 0.13-SiGe bipolar complementary metal oxide …

This letter presents a Ku-band fully differential low-noise amplifier (LNA) using current reuse
technique and weakly saturated input SiGe heterojunction bipolar transistors (HBTs) pair …

Jüngste Fortschritte auf dem Gebiet des Quantencomputings haben die Behauptung eines
Rechenvorteils für Quantencomputer weiter untermauert, und die neusten Entwicklungen …

The effect of input matching on an integrated low noise amplifier (LNA) is investigated. A
simple resistor-inductor-capacitor (RLC) equivalent circuit model (ECN) of the input …