A review of sharp-switching devices for ultra-low power applications
S Cristoloveanu, J Wan… - IEEE Journal of the …, 2016 - ieeexplore.ieee.org
The reduction of the supply voltage is standard MOSFETs is impeded by the subthreshold
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …
Additively manufacturable micro-mechanical logic gates
Early examples of computers were almost exclusively based on mechanical devices.
Although electronic computers became dominant in the past 60 years, recent advancements …
Although electronic computers became dominant in the past 60 years, recent advancements …
Science and engineering beyond Moore's law
RK Cavin, P Lugli, VV Zhirnov - Proceedings of the IEEE, 2012 - ieeexplore.ieee.org
In this paper, the historical effects and benefits of Moore's law for semiconductor
technologies are reviewed, and it is offered that the rapid learning curve obtained to the …
technologies are reviewed, and it is offered that the rapid learning curve obtained to the …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
A sub-1-volt nanoelectromechanical switching device
Abstract Nanoelectromechanical (NEM) switches,,,,, have received widespread attention as
promising candidates in the drive to surmount the physical limitations currently faced by …
promising candidates in the drive to surmount the physical limitations currently faced by …
Mechanical computing redux: Relays for integrated circuit applications
V Pott, H Kam, R Nathanael, J Jeon… - Proceedings of the …, 2010 - ieeexplore.ieee.org
Power density has grown to be the dominant challenge for continued complementary metal–
oxide–semiconductor (CMOS) technology scaling. Together with recent improvements in …
oxide–semiconductor (CMOS) technology scaling. Together with recent improvements in …
Integrated circuit design with NEM relays
F Chen, H Kam, D Markovic, TJK Liu… - 2008 IEEE/ACM …, 2008 - ieeexplore.ieee.org
To overcome the energy-efficiency limitations imposed by finite sub-threshold slope in
CMOS transistors, this paper explores the design of integrated circuits based on nano …
CMOS transistors, this paper explores the design of integrated circuits based on nano …
4-terminal relay technology for complementary logic
R Nathanael, V Pott, H Kam, J Jeon… - 2009 IEEE International …, 2009 - ieeexplore.ieee.org
A 4-terminal (4T) relay technology is proposed for complementary logic circuit applications.
The advantage of the 4T relay design is that it provides a means for electrically adjusting the …
The advantage of the 4T relay design is that it provides a means for electrically adjusting the …
Nanoelectromechanical switches for low-power digital computing
A Peschot, C Qian, TJ King Liu - Micromachines, 2015 - mdpi.com
The need for more energy-efficient solid-state switches beyond complementary metal-oxide-
semiconductor (CMOS) transistors has become a major concern as the power consumption …
semiconductor (CMOS) transistors has become a major concern as the power consumption …