A review of high-end display technologies focusing on inkjet printed manufacturing

R Kaçar, RB Serin, E Uçar, A Ülkü - Materials Today Communications, 2023 - Elsevier
Inkjet is the most widespread microfluid based printing technology spreading far beyond its
traditional role in the form of desktop home & office printers. It has been regarded as purely …

Flexible oxide thin film transistors, memristors, and their integration

A Panca, J Panidi, H Faber… - Advanced Functional …, 2023 - Wiley Online Library
Flexible electronics have seen extensive research over the past years due to their potential
stretchability and adaptability to non‐flat surfaces. They are key to realizing low‐power …

Visible light-driven indium-gallium-zinc-oxide optoelectronic synaptic transistor with defect engineering for neuromorphic computing system and artificial intelligence

J Chung, K Park, GI Kim, JB An, S Jung, DH Choi… - Applied Surface …, 2023 - Elsevier
There has been considerable interest in the development of optoelectronic synaptic
transistors with synaptic functions and neural computations. These neuromorphic devices …

Digital electrochemistry for on‐chip heterogeneous material integration

B Bao, B Rivkin, F Akbar, DD Karnaushenko… - Advanced …, 2021 - Wiley Online Library
Many modern electronic applications rely on functional units arranged in an active‐matrix
integrated on a single chip. The active‐matrix allows numerous identical device pixels to be …

High-mobility flexible/transparent p-type copper iodide thin-film transistors and complementary inverters

H Wu, L Liang, X Wang, X Shi, H Zhang, Y Pei… - Applied Surface …, 2023 - Elsevier
High-performance transparent and low-process-temperature p-type devices are essential for
portable and 'invisible'electronics. In this work, high-performance p-channel copper iodide …

Multifunctional oxygen scavenger layer for high-performance oxide thin-film transistors with low-temperature processing

MS Kim, HT Kim, H Yoo, DH Choi… - … Applied Materials & …, 2021 - ACS Publications
In this study, the oxygen scavenger layer (OSL) is proposed as a back channel in the bilayer
channel to enhance both the electrical characteristics and stability of an amorphous indium …

Effect of oxygen defect on the performance of Nd: InZnO high mobility thin-film transistors

Y Li, X Zeng, Q Ye, R Yao, J Zhong, X Fu, Y Yang… - Surfaces and …, 2022 - Elsevier
High mobility and stability are eternal themes for oxide semiconductor TFT. However, there
is a natural contradiction between mobility and stability. The oxygen defect state has a great …

Performance enhancement and bending restoration for flexible amorphous indium gallium zinc oxide thin-film transistors by low-temperature supercritical dehydration …

J Zhang, W Huang, KC Chang, Y Shi… - … Applied Materials & …, 2021 - ACS Publications
For high-performance and high-lifetime flexible and wearable electronic applications, a low-
temperature posttreatment method is highly expected to enhance the device performance …

Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application

W Zeng, Z Peng, D Lin, AA Guliakova… - … Applied Materials & …, 2023 - ACS Publications
Technologies for human–machine interactions are booming now. In order to achieve
multifunctional sensing abilities of electronic skins, further developments of various sensors …

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer

HJ Kim, SP Park, WK Min, D Kim, K Park… - ACS Applied Materials …, 2021 - ACS Publications
We introduced an organic interlayer into the Schottky contact interface to control the contact
property. After inserting an 11-nm-thick polyethylenimine (PEI) interlayer between the …