Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

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Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

A Quevedo, F Wu, TY Tsai, JJ Ewing, T Tak… - Applied Physics …, 2024 - pubs.aip.org

V-defects are morphological defects that typically form on threading dislocations during
epitaxial growth of (0001)-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped …

被引用次数：2 相关文章所有 3 个版本

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Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

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