Based on time-variant behavior of metal-oxide-semiconductor field-effect transistors in large-
signal operations, harmonic translations and their mutual effects are analyzed. Large …

We review the recent advances on the implementation of electronic circuits that operate in
the millimeter-wave (30–300 GHz) and terahertz (300–3000 GHz) frequency ranges. The …

Based on piecewise linear modeling of field-effect transistors, harmonic translations are
deployed to analyze the fundamental limits for a maximum second-harmonic power …

A flip-chip-assembled W-band receiver composed of a 90-nm CMOS chip and an integrated-
passive-device (IPD) carrier is presented in this paper. The chip which integrates a low …

A balunless frequency doubler (FD) architecture which can provide differential output
without any additional balun required is proposed in this paper. The architecture …

A comparison between high speed optical receivers implanted using different technologies
such as CMOS, SiGe, SOI, and FinFET is presented. We discuss important design trade-offs …

Demand for wireless network capacity keeps growing exponentially every year, as a result a
1000-fold increase in data traffic is projected over the next 10 years in the context of 5G …

A voltage controlled oscillator (VCO) with ultra wide tuning range is presented in the second
chapter. This VCO incorporates a system of coupled oscillators with two Active Mode …

Architectures and Integrated Circuits for Efficient, High-power “Digital” Transmitters for
Millimeter-wave Applications Anan Page 1 Architectures and Integrated Circuits for Efficient …